Storyline: Chinese researchers develop world's fastest flash memory device [Voice_over] Chinese researchers from Fudan University in Shanghai have developed a non-volatile flash memory device that’s capable of storing data at a speed of one bit per 400 picoseconds, or 400 trillionths of a second. Put simply… [Sound_bite] Liu Chunsen, researcher, State Key Laboratory of Integrated Chips and Systems, Fudan University: "The increase in speed is a major breakthrough, completely overcoming a theoretical bottleneck in existing storage technology frameworks.” [Voice_over] Developers say, as a non-volatile memory drive, the chip, named PoX, will be able to retain data without power when idle. And by swaping silicon for 2D Dira graphene, which is known for its ability to let charges move quickly and freely, developers have created a chip that uses extremely little energy and that can process data at extremely fast speeds. Perfect for powering products with AI. In fact, developers have been working closely with various technology companies for the real world rollout of the chips. [Sound_bite] Liu Chunsen, researcher, State Key Laboratory of Integrated Chips and Systems, Fudan University: "We have now been able to make a small-scale, fully functional chip. The next step involves integrating it into existing smartphones and computers. This way, when deploying local models on our phones and computers, we will no longer encounter the bottleneck issues such as lagging and heating caused by existing storage technology." [Voice_over] The researchers findings were first published in the peer-reviewed journal Nature in mid-April. [Restrictions : No access Chinese mainland]