The world's fastest flash memory device recently developed by a group of Chinese researchers is capable of storing data at a speed of one bit per 400 picoseconds, setting a new record for the fastest semiconductor storage device ever reported, according a scientist that led the groundbreaking research. This groundbreaking research result by Shanghai-based Fudan University researchers was published in Nature on Wednesday. Named "PoX," this non-volatile memory outperforms even the fastest volatile memory technologies, which take around one to ten nanoseconds to store one bit of data. A picosecond is one-thousandth of a nanosecond or one-trillionth of a second. "The data storage speeds of mainstream manufacturers' flash memory devices are typically at microsecond or millisecond levels, but 'PoX' has reached the picosecond level. In short, 'PoX' works faster and better," said Zhou Peng, a professor at Fudan University State Key Laboratory of Integrated Chips and Systems. The device employs a two-dimensional Dirac graphene-channel flash memory using an innovative mechanism, shattering the speed limits of non-volatile information storage and access. "The new theoretical framework we officially proposed enables an unlimited injection rule, which allows picosecond-level flash memory devices to reach the P/E speed of chips," said Liu Chunsen, a researcher at the laboratory. The semiconductor charge-storage technology, the fastest in the world, is expected to completely change the existing memory architecture after large-scale integration. Based on the technology, personal computers will no longer distinguish between internal and external storage in the future, neither will it require tiered storage. In addition, the technology will also help achieve local deployment of large artificial intelligence (AI) models, according to a post of Fudan University. The video shows: Shanghai, China - April 17, 2025 1. Various of researcher observing flash memory device, "PoX" 2. Images displayed on computer 3. SOUNDBITE (Chinese) Zhou Peng, professor, Fudan University State Key Laboratory of Integrated Chips and Systems (partially overlaid with shots 4-5): "The data storage speeds of mainstream manufacturers' flash memory devices are typically at microsecond or millisecond levels, but 'PoX' has reached the picosecond level. In short, 'PoX' works faster and better." ++SHOTS OVERLAYING SOUNDBITE++ 4. Researchers working 5. Data displayed on computer screen ++SHOTS OVERLAYING SOUNDBITE++ 6. Various of researcher observing chip 7. Researchers talking 8. Image displayed on computer screen 9. Researcher operating microscope 10. Various of researcher showing flash memory device, "PoX" 11. SOUNDBITE (Chinese) Zhou Peng, professor, Fudan University State Key Laboratory of Integrated Chips and Systems (partially overlaid with shot 12): "The new theoretical framework we officially proposed enables an unlimited injection rule, which allows picosecond-level flash memory devices to reach the P/E speed of chips." ++SHOT OVERLAYING SOUNDBITE++ 12. Animation showing working mechanism of theoretical framework of "PoX" ++SHOT OVERLAYING SOUNDBITE++ 13. Various of PPT showing working mechanism of "PoX" 14. Various of PPT showing work efficiency of "PoX" FILE: China - Exact Date and Location Unknown 15. Various of supercomputers, cables 16. Interior of laboratory 17. Various of researcher observing wafer [Restrictions: No access Chinese mainland]